logo

L2SD1781KRLT1G Datasheet, Leshan Radio Company

L2SD1781KRLT1G transistor equivalent, medium power transistor.

L2SD1781KRLT1G Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 126.11KB)

L2SD1781KRLT1G Datasheet
L2SD1781KRLT1G Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 126.11KB)

L2SD1781KRLT1G Datasheet

Features and benefits

1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 4) Pb Free Package is.

Image gallery

L2SD1781KRLT1G Page 1 L2SD1781KRLT1G Page 2 L2SD1781KRLT1G Page 3

TAGS

L2SD1781KRLT1G
Medium
Power
Transistor
Leshan Radio Company

Manufacturer


Leshan Radio Company

Related datasheet

L2SD1781KRLT1

L2SD1781KRLT3G

L2SD1781KQLT1

L2SD1781KQLT1G

L2SD1781KQLT3G

L2SD2114KVLT1

L2SD2114KVLT1G

L2SD2114KVLT3G

L2SD2114KWLT1

L2SD2114KWLT1G

L2SD2114KWLT3G

L2SA1036KPLT1

L2SA1036KQLT1

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts